Press Release: POET Technologies and Synopsys Collaborate on Advanced Modeling of Planar Electrical Technology and Development of POET's First Process Design Kit
(Dow Jones 09.02 13:00:06)
POET Technologies and Synopsys Collaborate on Advanced Modeling of Planar
Electrical Technology and Development of POET's First Process Design Kit
TORONTO, ONTARIO and STORRS, CONNECTICUT--(Marketwired - Sept. 2, 2014) -
POET Technologies Inc. (TSX VENTURE:PTK)(OTCQX:POETF) ("the Company") -
developer of the planar opto-electronic technology (POET) platform for
monolithic fabrication of integrated circuit devices containing both
electronic and optical elements on a single semiconductor wafer - today
announced a collaboration with Synopsys, Inc. -- a global leader providing
software, IP and services used to accelerate innovation in chips and
electronic systems -- to develop an advanced model and first Process Design
Kit (PDK) of POET's electrical devices (PET) targeting the 40-nm technology
node widely used for highly integrated systems-on-chip (SoC).
Through this collaboration, POET Technologies will use Synopsys' TCAD
toolset and services to continue to develop the PET and POET PDKs. The PET
PDK milestone (MS-12) focuses on devices requiring only the electronic
subset of the POET devices and processes. Mr. Daniel DeSimone, CTO noted:
"Synopsys will provide expertise and services to the POET team, enabling us
to expedite the design process. The Synopsys TCAD software toolset is well
positioned for the POET PDK requirements."
The Synopsys toolset will be used for process technology development and
design of nano-scale devices in POET's III-V compound semiconductor process.
Devices include complementary HFET and HBT transistors with high electron
mobility performance, including a thyristor with both optical and electrical
operation. These devices will form the foundation of POET's technology that
is able to integrate active optical circuitry, lasers, modulators, filters,
detectors and electrical circuitry on a single die.
"POET Technologies III-V process and devices IP represent a significant
innovation for our industry, and we look forward to the opportunity to work
with the POET team on their first PDK," said Terry Ma, Vice President of
Engineering for TCAD at Synopsys. "This collaboration with POET will combine
the strengths of our TCAD modeling expertise and POET's innovative
technologies to provide leading-edge semiconductor companies significant
benefits for next-generation semiconductor designs."
The PET PDK and process offers lower cost and simpler process fab options
for applications that do not require the full POET optical feature set. Due
to the high mobility inherent in III-V materials, PET technology is
predicted to deliver performance, which could be equivalent to 3 to 4 nodes
ahead of mainstream technologies. Further performance and novel capabilities
will be enabled by the incorporation of in-plane optical intra and
inter-chip signaling capabilities within the electrical technology. The
PET/PDK is scheduled to be available at the end of Q4 2014 and will allow
POET to provide detailed design information to industry fab partners and
customers. This will enable pre-semiconductor design evaluation to integrate
optical, analog and digital functions together. PET-based electronic devices
represent a breakthrough in performance and power efficiency.
Mr. Copetti concluded, "We are delighted to target a 40-nm technology node
for our first PDK delivery. This is an aggressive target for our POET
devices and process IP. This will demonstrate to the industry the
significance and the strengths of POET compared to the performance and power
efficiency of today's widely used technologies."
About POET Technologies Inc.
POET Technologies is the developer of the POET platform for monolithic
fabrication of integrated circuit devices containing both electronic and
optical elements on a single semiconductor wafer. With head office in
Toronto, Ontario, Canada, and operations in Storrs, CT, the Company, through
ODIS Inc., a U.S. company, designs III-V semiconductor devices for military,
industrial and commercial applications, including infrared sensor arrays and
ultra-low-power random access memory. The Company has several issued and
pending patents for the POET process, with potential high speed and
power-efficient applications in devices such as servers, tablet computers
and smartphones. The Company's common shares trade on the TSX Venture
Exchange under the symbol "PTK" and on the OTCQX under the symbol "POETF".
For more information please visit our websites at www.poet-technologies.com.
ON BEHALF OF THE BOARD OF DIRECTORS
Michel Lafrance, Secretary
Neither TSX Venture Exchange nor its Regulation Services Provider (as that
term is defined in the policies of the TSX Venture Exchange) accepts
responsibility for the adequacy or accuracy of this release.
This news release contains "forward-looking information" (within the meaning
of applicable Canadian securities laws) and "forward -looking statements"
(within the meaning of the U.S. Private Securities Litigation Reform Act of
1995). Such statements or information are identified with words such as
"anticipate", "believe", "expect", "plan", "intend", "potential",
"estimate", "propose", "project", "outlook", "foresee" or similar words
suggesting future outcomes or statements regarding an outlook. Such
statements include the Company's expectations regarding the anticipated
availability of the PET/TDK and the relative disruptive performance and
power efficiency of the Company's technologies over existing technologies.
Such forward-looking information or statements are based on a number of
risks, uncertainties and assumptions which may cause actual results or other
expectations to differ materially from those anticipated and which may prove
to be incorrect. Assumptions have been made regarding, among other things,
management's expectations regarding future growth, plans for and completion
of projects by the Company's third party relationships, availability of
capital, and the necessity to incur capital and other expenditures. Actual
results could differ materially due to a number of factors, including,
without limitation, operational risks in the completion of the Company's
anticipated projects, delays or changes in plans with respect to the
development of the Company's anticipated projects by the Company's third
party relationships, risks affecting the Company's ability to execute
projects, the ability to attract key personnel, and the inability to raise
additional capital. Although the Company believes that the expectations
reflected in the forward-looking information or statements are reasonable,
prospective investors in the Company's securities should not place undue
reliance on forward-looking statements because the Company can provide no
assurance that such expectations will prove to be correct. Forward- looking
information and statements contained in this news release are as of the date
of this news release and the Company assumes no obligation to update or
revise this forward-looking information and statements except as required by
law.
Christopher Chu, Taylor Rafferty, LLC
(908) 251-9869
poet@taylor-rafferty.com
(END) Dow Jones Newswires
September 02, 2014 07:00 ET (11:00 GMT)
S.DJ PTK.V CA73044W1041 I/REE .ENERGY N/DJG N/DJGP N/DJGS N/DJGV N/DJI N/DJIV N/DJN N/DJPT N/DN N/DOI N/IPR N/NRG N/WED N/WER N/CNW N/DJPN N/DJWI N/PRL N/TPCT M/ENE M/NND M/TPX P/ABO P/AENE P/AEQI P/NRG P/SGN P/WMMI R/CN .CANADA R/NME .NAMERICA R/ONT .ONTARIO
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